Commit 45019100 authored by natsfr's avatar natsfr

added register map

parents 0155627f 2f34ca0e
S-Parameter Files:
------------------
Within this directory you are able to see the main operating point
information within the filename:
For bipolar transistors you have to read as follows:
the filename XXAAABBB.S2P is coded:
XX internal type definition
AAA shows the voltage; V means Volt;
the character stands instead of the decimal point
ie. 10V means 10Volts; 1V0 means 1.0Volts
BBB shows the current; M means mA,
A means Ampere, U means µA;
the character stands instead of the decimal point
ie. 10M means 10mA; 1M0 stands for 1.0mA;
A10 for 0.1A; 10U for 10µA;
(this is also valid for the GaAs FETs)
For diodes you have to read as follows:
the filename XXAAABBB.S1P is coded:
XX internal type definition
AAA shows the voltage; V means Volt;
the character stands instead of the decimal point
ie. 10V means 10Volts; 1V0 means 1.0Volts
BBB shows the current; M means mA,
A means Ampere; U means µA
the character stands instead of the decimal point
ie. 10M means 10mA; 1M0 stands for 1.0mA;
A10 for 0.1A; 10U for 10µA;
if the voltage is V00 the diode is foreward biased and a current is shown
if the current is U00 the shown voltage is the backward biasing voltage
For files , changed v( volt) into p, are measured in forward direction
forward direction is marked with negativ VR
For MOS FETs and dual gate GaAs-FETs you have to read as follows:
the filename XXAABBCC.S2P is coded:
XX internal type definition
AA is UDS in V*0.1 i.e 50 means 5.0V; 15 means 1.5V;
BB is UG(2)S in V*0.1 ie 35 means 3.5V; 10 means 1.0V;
CC is ID in mA ie 10 means 10mA; 05 means 5mA;
README.TXT V4.0 September 2000
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! VR = 1 V
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.99999 1.1
0.100 0.99902 -0.9
0.150 0.99999 -1.0
0.200 0.99999 -1.5
0.250 0.99999 -2.1
0.300 0.99888 -2.4
0.400 0.99999 -3.2
0.500 0.99999 -4.1
0.600 0.99887 -4.9
0.800 0.99999 -6.5
1.000 0.99753 -8.1
1.200 0.99756 -9.8
1.500 0.99666 -12.4
2.000 0.99586 -17.0
2.500 0.99504 -22.0
3.000 0.99259 -27.3
3.500 0.99328 -33.3
4.000 0.98837 -39.8
4.500 0.98368 -47.0
5.000 0.97741 -54.9
5.500 0.97364 -63.9
6.000 0.96616 -74.0
7.000 0.96455 -99.0
8.000 0.94062 -132.1
9.000 0.90198 -173.1
10.000 0.87563 151.2
11.000 0.89969 117.2
12.000 0.89790 92.2
13.000 0.88785 76.8
14.000 0.91564 64.9
15.000 0.87854 51.7
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! VR = 2 V
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.97965 0.8
0.100 0.99433 -0.7
0.150 0.99999 -0.8
0.200 0.99960 -1.6
0.250 0.99736 -2.0
0.300 0.99765 -2.4
0.400 0.99876 -3.0
0.500 0.99992 -4.1
0.600 0.99821 -4.8
0.800 0.99984 -6.3
1.000 0.99831 -7.9
1.200 0.99717 -9.5
1.500 0.99610 -12.1
2.000 0.99588 -16.5
2.500 0.99494 -21.3
3.000 0.99360 -26.5
3.500 0.99370 -32.3
4.000 0.98853 -38.6
4.500 0.98442 -45.5
5.000 0.97818 -53.1
5.500 0.97479 -61.7
6.000 0.96828 -71.3
7.000 0.96587 -95.1
8.000 0.94389 -126.6
9.000 0.90470 -166.0
10.000 0.87491 157.0
11.000 0.89704 122.3
12.000 0.89658 95.9
13.000 0.88662 79.6
14.000 0.91534 66.9
15.000 0.87485 53.0
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! VR = 3 V
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.99999 1.2
0.100 0.99561 -1.2
0.150 0.99644 -1.1
0.200 0.99999 -1.5
0.250 0.99869 -1.9
0.300 0.99657 -2.3
0.400 0.99911 -3.1
0.500 0.99976 -3.9
0.600 0.99843 -4.7
0.800 0.99980 -6.2
1.000 0.99824 -7.8
1.200 0.99711 -9.4
1.500 0.99614 -11.9
2.000 0.99599 -16.3
2.500 0.99534 -21.0
3.000 0.99330 -26.1
3.500 0.99391 -31.8
4.000 0.98818 -37.9
4.500 0.98431 -44.7
5.000 0.97873 -52.1
5.500 0.97564 -60.5
6.000 0.96829 -69.9
7.000 0.96699 -93.0
8.000 0.94531 -123.7
9.000 0.90684 -162.3
10.000 0.87419 160.2
11.000 0.89616 125.1
12.000 0.89592 98.0
13.000 0.88608 81.1
14.000 0.91355 68.0
15.000 0.87215 53.7
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! VR = 4 V
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.98888 1.3
0.100 0.99794 -0.7
0.150 0.99567 -1.2
0.200 0.99999 -1.5
0.250 0.99757 -1.9
0.300 0.99767 -2.4
0.400 0.99905 -3.1
0.500 0.99999 -3.8
0.600 0.99833 -4.7
0.800 0.99930 -6.2
1.000 0.99808 -7.7
1.200 0.99739 -9.3
1.500 0.99618 -11.8
2.000 0.99584 -16.1
2.500 0.99526 -20.8
3.000 0.99242 -25.7
3.500 0.99325 -31.4
4.000 0.98804 -37.5
4.500 0.98480 -44.1
5.000 0.97859 -51.4
5.500 0.97593 -59.7
6.000 0.96890 -69.0
7.000 0.96823 -91.6
8.000 0.94649 -121.8
9.000 0.90800 -159.7
10.000 0.87397 162.4
11.000 0.89501 127.1
12.000 0.89553 99.5
13.000 0.88522 82.2
14.000 0.91316 68.8
15.000 0.87016 54.3
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! VR = 0 V
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.98419 0.8
0.100 0.99999 -1.0
0.150 0.99872 -1.2
0.200 0.99999 -1.7
0.250 0.99474 -2.2
0.300 0.99999 -2.8
0.400 0.99778 -3.5
0.500 0.99989 -4.6
0.600 0.99856 -5.5
0.800 0.99999 -7.2
1.000 0.99811 -9.1
1.200 0.99711 -10.9
1.500 0.99599 -13.9
2.000 0.99563 -19.0
2.500 0.99429 -24.7
3.000 0.99151 -30.8
3.500 0.99146 -37.7
4.000 0.98569 -45.3
4.500 0.97996 -53.6
5.000 0.97262 -63.1
5.500 0.96924 -73.8
6.000 0.95962 -86.0
7.000 0.95364 -116.2
8.000 0.92382 -155.5
9.000 0.88887 164.0
10.000 0.87923 130.0
11.000 0.90644 100.1
12.000 0.90229 79.9
13.000 0.89119 67.8
14.000 0.91824 58.2
15.000 0.89092 47.3
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 10 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.69998 179.7
0.100 0.68874 176.9
0.150 0.68355 176.0
0.200 0.68792 174.6
0.250 0.68560 173.2
0.300 0.68480 172.1
0.400 0.68784 169.4
0.500 0.68652 166.7
0.600 0.68727 164.2
0.800 0.69010 159.1
1.000 0.69436 154.2
1.200 0.69955 149.4
1.500 0.70578 142.5
2.000 0.71851 131.9
2.500 0.73211 122.1
3.000 0.75055 113.1
3.500 0.76149 105.0
4.000 0.77779 97.5
4.500 0.79306 90.7
5.000 0.80832 84.4
5.500 0.81784 78.5
6.000 0.82996 73.1
7.000 0.84075 63.7
8.000 0.85532 55.2
9.000 0.86914 48.0
10.000 0.88141 41.4
11.000 0.89000 35.9
12.000 0.87670 31.5
13.000 0.86107 29.7
14.000 0.87644 24.2
15.000 0.87949 14.8
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 0.01 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.98211 1.2
0.100 0.97668 -0.9
0.150 0.97701 -1.6
0.200 0.97875 -1.8
0.250 0.97665 -2.3
0.300 0.97631 -2.8
0.400 0.97572 -3.7
0.500 0.97782 -4.8
0.600 0.97651 -5.7
0.800 0.97570 -7.6
1.000 0.97438 -9.5
1.200 0.97408 -11.6
1.500 0.97039 -14.7
2.000 0.97000 -20.1
2.500 0.96638 -26.2
3.000 0.96203 -32.6
3.500 0.95994 -40.0
4.000 0.94853 -48.4
4.500 0.94223 -57.1
5.000 0.92871 -67.7
5.500 0.92256 -79.4
6.000 0.91083 -92.5
7.000 0.89552 -125.5
8.000 0.86013 -168.1
9.000 0.82975 153.1
10.000 0.83868 120.2
11.000 0.88629 93.2
12.000 0.90554 75.4
13.000 0.89647 64.3
14.000 0.90913 55.4
15.000 0.89588 45.6
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 12 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.69793 179.7
0.100 0.69447 177.3
0.150 0.68971 176.2
0.200 0.69326 174.6
0.250 0.69419 173.4
0.300 0.68886 171.9
0.400 0.69075 169.4
0.500 0.69359 166.8
0.600 0.69327 164.2
0.800 0.69614 159.1
1.000 0.70009 154.2
1.200 0.70539 149.4
1.500 0.71140 142.6
2.000 0.72404 132.0
2.500 0.73739 122.2
3.000 0.75466 113.1
3.500 0.76610 105.0
4.000 0.78139 97.6
4.500 0.79658 90.7
5.000 0.81213 84.4
5.500 0.82151 78.5
6.000 0.83256 73.2
7.000 0.84330 63.7
8.000 0.85792 55.3
9.000 0.87186 48.0
10.000 0.88370 41.4
11.000 0.89074 35.8
12.000 0.87817 31.5
13.000 0.86297 29.7
14.000 0.87889 24.2
15.000 0.88035 14.8
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 15 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.69008 178.2
0.100 0.69569 177.5
0.150 0.69606 176.1
0.200 0.69827 174.8
0.250 0.69459 173.4
0.300 0.69590 171.9
0.400 0.69520 169.4
0.500 0.69520 166.8
0.600 0.69633 164.2
0.800 0.69943 159.1
1.000 0.70306 154.2
1.200 0.70810 149.4
1.500 0.71440 142.6
2.000 0.72705 132.0
2.500 0.73975 122.2
3.000 0.75761 113.1
3.500 0.76883 105.0
4.000 0.78374 97.6
4.500 0.79894 90.8
5.000 0.81347 84.4
5.500 0.82297 78.5
6.000 0.83392 73.2
7.000 0.84492 63.7
8.000 0.85972 55.2
9.000 0.87297 48.0
10.000 0.88461 41.4
11.000 0.89207 35.8
12.000 0.87908 31.5
13.000 0.86350 29.6
14.000 0.87854 24.2
15.000 0.88134 14.8
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 1 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.21442 171.3
0.100 0.19570 175.7
0.150 0.19031 173.9
0.200 0.19588 172.3
0.250 0.19495 170.3
0.300 0.19309 167.8
0.400 0.19702 164.3
0.500 0.20041 160.6
0.600 0.20369 156.6
0.800 0.21204 150.0
1.000 0.22205 143.8
1.200 0.23328 138.3
1.500 0.24927 131.0
2.000 0.27991 120.5
2.500 0.30990 111.6
3.000 0.34390 104.1
3.500 0.37298 97.2
4.000 0.40170 91.3
4.500 0.43346 85.9
5.000 0.46305 80.8
5.500 0.48910 76.3
6.000 0.51595 72.2
7.000 0.56064 64.2
8.000 0.60537 56.8
9.000 0.64841 50.2
10.000 0.68859 44.3
11.000 0.72471 39.2
12.000 0.73129 35.3
13.000 0.73229 33.7
14.000 0.76023 30.6
15.000 0.78114 20.5
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 1.2 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.27831 177.9
0.100 0.25893 176.5
0.150 0.26191 175.1
0.200 0.26770 173.7
0.250 0.26703 171.3
0.300 0.26339 169.2
0.400 0.26753 166.6
0.500 0.27051 162.9
0.600 0.27165 159.7
0.800 0.27997 153.5
1.000 0.28913 147.8
1.200 0.30062 142.5
1.500 0.31447 135.1
2.000 0.34373 124.5
2.500 0.37140 115.1
3.000 0.40410 106.9
3.500 0.43095 99.6
4.000 0.46044 93.2
4.500 0.49025 87.3
5.000 0.51779 81.9
5.500 0.54227 76.8
6.000 0.56812 72.4
7.000 0.60673 64.0
8.000 0.64733 56.2
9.000 0.68506 49.5
10.000 0.72013 43.5
11.000 0.75076 38.2
12.000 0.75295 34.3
13.000 0.74997 32.7
14.000 0.77594 28.9
15.000 0.79368 19.2
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 1.5 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.35366 177.6
0.100 0.34767 174.9
0.150 0.34371 175.7
0.200 0.34740 173.6
0.250 0.34660 172.3
0.300 0.34513 170.6
0.400 0.34710 167.8
0.500 0.35038 164.5
0.600 0.35143 161.6
0.800 0.35763 155.8
1.000 0.36571 150.3
1.200 0.37568 145.1
1.500 0.38884 138.0
2.000 0.41496 127.3
2.500 0.44151 117.7
3.000 0.47101 109.2
3.500 0.49715 101.5
4.000 0.52477 94.7
4.500 0.55191 88.4
5.000 0.57811 82.7
5.500 0.59951 77.4
6.000 0.62336 72.6
7.000 0.65703 63.8
8.000 0.69157 55.9
9.000 0.72464 48.9
10.000 0.75454 42.7
11.000 0.78000 37.4
12.000 0.77868 33.3
13.000 0.77193 31.7
14.000 0.79339 27.5
15.000 0.80808 17.8
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 20 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.68771 178.5
0.100 0.69721 177.0
0.150 0.68762 176.2
0.200 0.69493 174.6
0.250 0.69043 173.3
0.300 0.69179 172.1
0.400 0.69413 169.3
0.500 0.69374 166.7
0.600 0.69458 164.2
0.800 0.69707 159.1
1.000 0.70136 154.2
1.200 0.70613 149.5
1.500 0.71253 142.6
2.000 0.72536 132.0
2.500 0.73828 122.2
3.000 0.75624 113.1
3.500 0.76724 105.0
4.000 0.78270 97.6
4.500 0.79747 90.7
5.000 0.81265 84.4
5.500 0.82179 78.5
6.000 0.83332 73.2
7.000 0.84339 63.7
8.000 0.85835 55.2
9.000 0.87194 48.0
10.000 0.88389 41.4
11.000 0.89113 35.8
12.000 0.87892 31.5
13.000 0.86304 29.7
14.000 0.87815 24.1
15.000 0.88060 14.8
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 0.02 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.94104 0.7
0.100 0.93578 -1.1
0.150 0.93780 -1.4
0.200 0.94153 -1.9
0.250 0.93797 -2.5
0.300 0.93877 -2.9
0.400 0.93906 -3.8
0.500 0.93901 -4.8
0.600 0.93867 -5.7
0.800 0.93841 -7.7
1.000 0.93628 -9.7
1.200 0.93446 -11.7
1.500 0.93202 -15.0
2.000 0.92933 -20.4
2.500 0.92412 -26.7
3.000 0.91617 -33.3
3.500 0.91143 -40.7
4.000 0.89739 -49.3
4.500 0.88747 -58.2
5.000 0.86841 -69.0
5.500 0.85755 -81.1
6.000 0.84021 -94.6
7.000 0.81603 -128.5
8.000 0.77915 -171.9
9.000 0.75984 149.7
10.000 0.78518 117.1
11.000 0.84836 90.9
12.000 0.88052 73.8
13.000 0.88018 63.2
14.000 0.89599 54.5
15.000 0.88855 44.9
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 25 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.67648 178.2
0.100 0.68881 177.6
0.150 0.67962 176.0
0.200 0.68776 174.6
0.250 0.68545 173.5
0.300 0.68170 172.0
0.400 0.68309 169.4
0.500 0.68511 166.8
0.600 0.68522 164.1
0.800 0.68827 159.1
1.000 0.69297 154.1
1.200 0.69814 149.4
1.500 0.70416 142.5
2.000 0.71773 131.9
2.500 0.73097 122.2
3.000 0.74873 113.1
3.500 0.75986 105.0
4.000 0.77674 97.5
4.500 0.79168 90.7
5.000 0.80741 84.3
5.500 0.81650 78.5
6.000 0.82905 73.2
7.000 0.83956 63.7
8.000 0.85447 55.3
9.000 0.86919 48.0
10.000 0.88058 41.4
11.000 0.88880 35.9
12.000 0.87650 31.5
13.000 0.86123 29.7
14.000 0.87584 24.2
15.000 0.87867 14.8
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 2 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.44544 179.7
0.100 0.43750 175.8
0.150 0.43191 175.9
0.200 0.43973 174.0
0.250 0.43854 172.7
0.300 0.43585 171.2
0.400 0.43803 168.4
0.500 0.43957 165.6
0.600 0.44255 162.8
0.800 0.44641 157.3
1.000 0.45454 152.1
1.200 0.46215 147.1
1.500 0.47380 140.0
2.000 0.49662 129.3
2.500 0.52076 119.6
3.000 0.54812 110.8
3.500 0.57014 102.9
4.000 0.59422 95.8
4.500 0.61944 89.3
5.000 0.64317 83.3
5.500 0.66211 77.8
6.000 0.68203 72.8
7.000 0.70990 63.7
8.000 0.73962 55.5
9.000 0.76691 48.5
10.000 0.79144 42.2
11.000 0.81108 36.8
12.000 0.80594 32.6
13.000 0.79715 30.8
14.000 0.81647 26.1
15.000 0.82731 16.6
!
! SIEMENS AG Semiconductor Group, Munich
! SIEMENS Small Signal Semiconductors
! BAT15-03W
! Si Schottky Diode in SOD323
! IF = 2.5 mA
! S-Parameters: May 1996
# GHz S MA R 50
! f S11
! GHz MAG ANG
0.050 0.52485 177.6
0.100 0.50078 176.9
0.150 0.49294 175.8
0.200 0.50097 174.3
0.250 0.49748 172.9
0.300 0.49484 171.5
0.400 0.49590 168.7
0.500 0.49969 166.1
0.600 0.50069 163.3
0.800 0.50539 158.0
1.000 0.51245 152.8
1.200 0.51880 147.9
1.500 0.52996 140.9
2.000 0.55089 130.3